Toshiba, CRRC, Gree Disclose Latest SiC Collaboration Developments, Highlighting Deepening Industry Chain Synergies
Recent collaborations among key industry players in the Silicon Carbide (SiC) sector demonstrate accelerated integration across the global third-generation semiconductor ecosystem. Enterprises including Toshiba, CRRC, and Gree have announced new partnerships spanning chip technology, power modules, and joint R&D initiatives.
Toshiba & BASIC Semiconductor Jointly Exhibit Industrial-Grade SiC Modules
On September 24, Toshiba Electronic Devices & Storage Corporation and BASIC Semiconductor presented their latest collaborative solutions through a joint exhibition booth. The showcased products included the Pcore™2 E2B and Pcore™2 L3 all-SiC power modules, along with the Pcore™6 E3B hybrid silicon carbide module. These modules integrate BASIC Semiconductor's SiC MOSFETs with Toshiba's RC-IGBT chip technology. Employing a high-reliability silicon nitride ceramic substrate, Press-Fit interface, and copper baseplate cooling structure, the modules demonstrate outstanding performance in reducing on-resistance, minimizing switching losses, controlling stray inductance, and enhancing reliability. They target applications such as high-power charging piles, power conversion systems (PCS), and solid-state circuit breakers.
This joint exhibition signifies a deeper collaboration phase between the two companies. Following a strategic cooperation agreement signed on August 29, the partners aim to combine their expertise in chip technology and module packaging to deliver more competitive power semiconductor solutions for the automotive and industrial markets.
CRRC Times Semiconductor & Semikron-Danfoss Deepen Chip Technology Collaboration
CRRC Times Semiconductor recently signed a procurement framework agreement with Semikron-Danfoss, strengthening their cooperation in the development and supply of power semiconductor chips. The collaboration will focus on expanding applications within renewable energy and industrial control sectors. This agreement builds upon a Memorandum of Understanding signed in April, marking a concrete step in implementing their strategic partnership. The partnership leverages complementary strengths and aims to provide core semiconductor support for the energy transition and sustainable development.
Gree & UESTC Establish Joint SiC Device Research Center
On October 9, Gree Electronic Components and the University of Electronic Science and Technology of China (UESTC) inaugurated the "SiC Power Semiconductor Device Joint Research Center" in Zhuhai. The center will focus on tackling key challenges across the SiC value chain, promoting the commercialization of R&D成果, and exploring new application scenarios. It will establish regular communication, technical seminars, and a joint talent cultivation mechanism. Having previously collaborated on planar device and trench technology, the partners plan to expand into automotive-grade reliability, advanced module packaging, and IPM driver development, positioning themselves to capture opportunities in the emerging SiC device market.
Wingtone Semiconductor Secures Investment from German Family Office, Accelerating Global Expansion
On September 26, Wingtone Semiconductor signed a strategic cooperation agreement with the German BHei Family Office, covering strategic investment, technical collaboration, and expansion in domestic and international markets. BHei stated this represents its first direct investment in the Chinese market, aiming to establish Wingtone as an innovative and internationally competitive third-generation semiconductor power module company. Founded in 2023 and headquartered in Shenzhen, Wingtone has a automotive-grade power module factory in Zhuhai. This partnership is expected to accelerate its global business layout.
