China makes homegrown breakthrough in laser stealth dicing technology for six-inch silicon carbide ingots.
China has achieved a major breakthrough in 6-inch SiC ingot laser stealth dicing technology, developed by Jiangsu Institute and Innovation Center (Suzhou). It improves efficiency and yield, reduces loss, breaks foreign monopoly, cuts substrate costs, and supports semiconductor localization for EVs, smart grids, and 5G.











