Grand-Hope Short-Fiber Hard Felt for SiC Crystal Growth

Publish Time: 2025-12-30visited:18 times

Ultra-High-Temperature Purity Assurance

Ash content <10 ppm, metallic impurities <5 ppm (semiconductor-grade purity), completely blocks silicon vapor erosion, reduces micro-pipe density in silicon carbide crystals by 83%.
Gas-liquid composite coating technology constructs a "molecular shield," improving silicon resistance by 300%.
High-temperature purification process ensures zero contamination in the 2300℃ crystal growth environment.

Performance	Grand-Hope Short-Fiber Hard Felt	Traditional Materials
Thermal Conductivity	0.038 W/(m·K)	0.15 W/(m·K)
Temperature Uniformity	±2℃ (throughout 2300℃)	±15℃
Response Speed	Matches high-frequency electromagnetic field, millisecond-level temperature adjustment	Delayed by 3 - 5 seconds

Graded pore structure (50 - 300μm) locks thermal energy, increases crystal growth speed by 40%, and boosts single-furnace productivity by 25% .

Energy consumption drastically reduced: Thermal efficiency improved by 45%, saving 800,000 kWh per furnace annually (equivalent to reducing 630 tons of CO₂ emissions).
Lifespan breakthrough: Thermal shock resistance >1200 cycles (ΔT = 2000℃ thermal cycling), replacement frequency reduced from once per month → once per year , annual maintenance costs reduced by 2 million CNY.
Rigid yet flexible damage resistance: Three-dimensional fiber-reinforced structure resists electromagnetic vibration deformation, thermal shrinkage rate <0.3% at 2300℃.

A silicon carbide wafer manufacturer achieved the following results after adopting Grand-Hope Short-Fiber Hard Felt:

Energy consumption: Electricity consumption per ton of crystals reduced by 52% (1580 kW·h → 760 kW·h).
Yield rate: Defect rate for 6-inch substrates decreased from 15% → 3.8%.
Cost: Annual expenditure on thermal field components reduced by 3 million CNY.

Grand-Hope New Materials——Defining the new standard for third-generation semiconductor thermal fields with nano-scale carbon architecture!